Con il comunicato stampa di seguito allegato, Samsung Electronics ha annunciato di aver sviluppato il primo modulo di RAM DDR3 avente una capacità di memorizzazione pari a ben 32GB. In accordo al produttore, oltre al numero di GB, un altra feature di primo piano del nuovo monulo è il ridotto consumo di potenza, dal momento che la tensione di polarizzazione è pari a soli 1.35V.
Dal punto di vista della tecnologia con cui è realizzato, Samsung fa sapere che il nuovo Registered Dual Inline Mmemory Module (RDIMM) è fabbricato con l'ausilio di un processo a 50nm e si avvale di ben 72 chip con densità pari a 4Gb (gigabit) ciascuno. Su ogni lato del PCB Samsung ha allocato 9 package a 4 die (quad-die package, o in breve QDP) per un totale di 32GB, considerando entrambi i lati.
NEW YORK--(BUSINESS WIRE)--Samsung Electronics Co., Ltd., the world leader in advanced memory
technology, announced today that it has developed the world’s first 32
Gigabyte (GB) DDR3 module – for use in server systems. The new module
operates at 1.35-volts, in support of the global trend to cut power
usage in mass storage computing environments.
"Compared to the 8GB memory modules used in today’s servers, our new
module packs an eco-sensitive wallop with four times the density at
significantly reduced power levels and no increase in the overall
footprint," said Jim Elliott, vice president, memory marketing, Samsung
Semiconductor, Inc. "For data centers, it’s a powerhouse in energy
efficiency and performance," he added.
Based on Samsung’s 50 nanometer (nm)-class 4 Gigabit (Gb) DDR3, the
1.35V DDR3 DRAM improves throughput by 20 percent over a 1.5V DDR3. Its
lower power consumption levels are in line with the pressing concern for
more energy-efficient "green" systems and components. The development of
low-power 4Gb DDR3 will be viewed as critical in reducing data center
costs, improving server time management and increasing overall
operational efficiency at higher densities.
For the new generation of green servers, the 4Gb DDR3’s high density
combined with its lower level of power consumption will not only reduce
electricity bills, but also allow for a cutback on installment fees,
maintenance fees and repair fees involving power suppliers and
heat-emitting equipment.
The new 32GB registered dual inline memory module (RDIMM) consists of 72
4Gb DDR3 chip dies produced using Samsung’s 50-nanometer class DRAM
production technology. A row of nine quad-die package (QDP) 16Gb DDR3s
are mounted on each side of the printed circuit board for a collective
32GB, highly compact configuration.
According to the International Data Corporation (IDC), a market research
and analysis firm, the worldwide DDR3 DRAM market will account for 29
percent of the total DRAM market in 2009 and 75 percent in 2011. In
addition, IDC estimates that 2Gb-or-higher DDR3 DRAM will make up three
percent of the total DRAM market in 2009 and 33 percent in 2011 (units
in bits).
News Source: Samsung Press Release
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